Wafer-scale porous graphene network shows room-temperature ferromagnetism

Researchers at Shenzhen University, the Japan Atomic Energy Agency, the National Institutes for Quantum Science and Technology (QST), the University of Tokyo, the University of Science and Technology of China, Xi’an Jiaotong University, Shenzhen Technology University (SZTU), and The Hong Kong Polytechnic University, have grown a wafer-scale hyper-porous graphene network (HGN) that shows intrinsic ferromagnetism at room temperature.

Optical image of HGN on a 2-inch Si wafer. Image from: Nanowerk

The film was produced across a full 2-inch oxide-coated silicon wafer using a plasma-assisted vapor process combined with low-energy electron irradiation, and reached a magnetic moment density roughly 1,000 times higher than defected highly oriented pyrolytic graphite (HOPG).

Optical image of HGN on a 2-inch Si wafer. Image from: NanowerkThe film was produced across a full 2-inch oxide-coated silicon wafer using a plasma-assisted vapor process combined with low-energy electron irradiation, and reached a magnetic moment density roughly 1,000 times higher than defected highly oriented pyrolytic graphite (HOPG).

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