Graphene nanoribbon FETs show potential as gamma radiation sensors

In a proof-of-concept study, the team fabricated field-effect transistors (FETs) based on nine-atom-wide armchair graphene nanoribbons (9-AGNRs), synthesized using a bottom-up, on-surface approach. The resulting structures were one atom thick and approximately 45 nanometers long on average, placing them in the quasi-one-dimensional regime where quantum transport effects dominate. These devices were characterized before and after gamma irradiation using Raman spectroscopy and electrical transport measurements.

University of Arizona researchers have demonstrated that atomically precise graphene nanoribbons (GNRs) can function as highly sensitive gamma-radiation sensors, while maintaining their underlying structural integrity under exposure – an unusual combination that could be valuable for fusion energy systems and space electronics.In a proof-of-concept study, the team fabricated field-effect transistors (FETs) based on nine-atom-wide armchair graphene nanoribbons (9-AGNRs), synthesized using a bottom-up, on-surface approach. The resulting structures were one atom thick and approximately 45 nanometers long on average, placing them in the quasi-one-dimensional regime where quantum transport effects dominate. These devices were characterized before and after gamma irradiation using Raman spectroscopy and electrical transport measurements.

Read More Graphene-Info – Graphene industry portal