Gate-tunable spin bands in graphene point toward low-voltage spin transistors

The first study rebuilt the graphene spin-device fabrication process around an inert-glovebox van der Waals assembly, laminating and cleaning the stack to produce atomically flat hexagonal boron nitride (h-BN) tunnel barriers rather than the oxide barriers more commonly used in graphene spin valves. That interface quality translated directly into device performance: nonlocal spin signals reached up to 1.6 kΩ at 2.5 K, spin polarization approached 90% (89% in the lead device), spin lifetime measured about 2.04 nanoseconds with a spin diffusion length of about 4.74 μm, and gate-tunable magnetoresistance exceeded 80%. Critically for eventual device use, the effect persisted at room temperature, where the same device retained a nonlocal spin resistance of about 160 Ω and roughly 42% spin polarization.

Researchers at the National University of Singapore (NUS), led by Assistant Professor Ahmet Avsar of the university’s Centre for Advanced 2D Materials, have combined a record-fidelity graphene spin-transport platform with magnetic-proximity band engineering to move graphene closer to practical spin-logic and spin-memory devices, across two complementary studies. The work targets one of graphene spintronics’ core limitations: interfacial disorder at the electrical contacts that inject and detect spin, which has historically scrambled spin information before it can be read out electrically.The first study rebuilt the graphene spin-device fabrication process around an inert-glovebox van der Waals assembly, laminating and cleaning the stack to produce atomically flat hexagonal boron nitride (h-BN) tunnel barriers rather than the oxide barriers more commonly used in graphene spin valves. That interface quality translated directly into device performance: nonlocal spin signals reached up to 1.6 kΩ at 2.5 K, spin polarization approached 90% (89% in the lead device), spin lifetime measured about 2.04 nanoseconds with a spin diffusion length of about 4.74 μm, and gate-tunable magnetoresistance exceeded 80%. Critically for eventual device use, the effect persisted at room temperature, where the same device retained a nonlocal spin resistance of about 160 Ω and roughly 42% spin polarization.

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​Gate-tunable spin bands in graphene point toward low-voltage spin transistors

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Gate-tunable spin bands in graphene point toward low-voltage spin transistors