Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies. However, their performance has been limited by how hot carriers have traditionally been generated.
A team of researchers, led by Prof. Liu Chi, Prof. Sun Dongming, and Prof. CHeng Huiming from the Institute of Metal Research (IMR) of the Chinese Academy of Sciences, has proposed a novel hot carrier generation mechanism called stimulated emission of heated carriers (SEHC). The team has also developed an innovative hot-emitter transistor (HOET), achieving an ultralow sub-threshold swing of less than 1 mV/dec and a peak-to-valley current ratio exceeding 100. The study provides a prototype of a low power, multifunctional device for the post-Moore era.
Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies. However, their performance has been limited by how hot carriers have traditionally been generated.
A team of researchers, led by Prof. Liu Chi, Prof. Sun Dongming, and Prof. CHeng Huiming from the Institute of Metal Research (IMR) of the Chinese Academy of Sciences, has proposed a novel hot carrier generation mechanism called stimulated emission of heated carriers (SEHC). The team has also developed an innovative hot-emitter transistor (HOET), achieving an ultralow sub-threshold swing of less than 1 mV/dec and a peak-to-valley current ratio exceeding 100. The study provides a prototype of a low power, multifunctional device for the post-Moore era.
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