Researchers show that interlayer twist induces the formation of self-doped p–n junctions at atomically thin thickness

Atomically thin 2D materials are promising candidates for extending Moore’s Law due to their exceptional geometric and electronic properties. However, the realization of ultrathin p–n junctions, as crucial components of modern electronic and optoelectronic devices, remains a significant challenge due to the limitations of traditional doping techniques used in bulk materials.

Researchers at Nanjing University of Posts and Telecommunications, Chizhou University, Henan University of Science and Technology and Yangzhou University have found that interlayer twisting can facilitate the formation of self-doped p–n junctions in 2D materials based on first-principles calculations combined with nonadiabatic molecular dynamics and nonequilibrium Green’s function methods.

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​Researchers show that interlayer twist induces the formation of self-doped p–n junctions at atomically thin thickness

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Researchers show that interlayer twist induces the formation of self-doped p–n junctions at atomically thin thickness