Researchers create miniscule graphene-MoS2 transistors

Researchers from China’s Tsinghua University and East China Normal University have created a transistor with the smallest gate length ever reported. This milestone was made possible by using graphene and molybdenum disulfide and stacking them into a staircase-like structure with two steps.

The structure of the side-wall transistor: Silicon dioxide base (dark blue), aluminum covered in aluminum oxide (brown ), the thin, light blue strip is graphene, the yellow and black strip is molybdenum disulfide, and underneath it, the hafnium dioxide.

On the higher step, there is the source, and on top of the lower step, there is the drain. Both are made of a titanium palladium alloy separated by the surface of the stairs, which is made of a single sheet of a molybdenum disulfide (MoS2), itself resting on a layer of hafnium dioxide that acts as an electrical insulator.