Paragraf has announced the launch of its latest Graphene Field Effect Transistor (GFET), the PMF2000, marking a step forward in scalable graphene device manufacturing.
The PMF2000 builds on Paragraf’s existing GFET technology, retaining its hallmark contamination-free graphene while introducing production on six-inch silicon wafers. This transition is enabled by the company’s new large-wafer manufacturing facility in Huntingdon – described as the world’s first graphene foundry. The move to larger wafers improves device yield and consistency, setting a new benchmark for quality and enabling reliable high-volume production.
Paragraf has announced the launch of its latest Graphene Field Effect Transistor (GFET), the PMF2000, marking a step forward in scalable graphene device manufacturing.The PMF2000 builds on Paragraf’s existing GFET technology, retaining its hallmark contamination-free graphene while introducing production on six-inch silicon wafers. This transition is enabled by the company’s new large-wafer manufacturing facility in Huntingdon – described as the world’s first graphene foundry. The move to larger wafers improves device yield and consistency, setting a new benchmark for quality and enabling reliable high-volume production.
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