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Magnetic memory device reduces power consumption, heat generation in MRAM semiconductors  

Magnetic memory device reduces power consumption, heat generation in MRAM semiconductors  

A research team, led by Professor Jung-Woo Yoo from the Department of Materials Science and Engineering at UNIST has unveiled a new type of magnetic memory device, designed to reduce power consumption and heat generation in MRAM semiconductors. The work was published in Nature Communications on October 10, 2024. 

A research team, led by Professor Jung-Woo Yoo from the Department of Materials Science and Engineering at UNIST has unveiled a new type of magnetic memory device, designed to reduce power consumption and heat generation in MRAM semiconductors. The work was published in Nature Communications on October 10, 2024. 

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