Boron nitride assists in protecting graphene in order to achieve next-gen electronics

Researchers from AMO, Oxford Instruments, Cambridge University, RWTH Aachen University and the University of Wuppertal have demonstrated a new method to use plasma enhanced atomic layer deposition (PEALD) on graphene without introducing defects into the graphene itself.

Currently, the most advanced technique for depositing dielectrics on graphene is atomic layer deposition (ALD), which allows to precisely control the uniformity, the composition and the thickness of the film. The process typically used on graphene and other 2D materials is thermal water-based ALD, as it does not damage the graphene sheet. However, the lack of nucleation sites on graphene limits the quality of the dielectric film, and requires the deposition of a seed layer prior to ALD to achieve good results. Another approach is plasma enhanced atomic layer deposition (PEALD), which, when applied to growth on graphene, can introduce surface damage. This is what to team addressed in this recent work.

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Boron Nitride, Graphene applications, Electronics, Technical / Research, Cambridge University