A new all-2-D light-emitting field-effect transistor

Transition metal dichalcogenides (TMDs), a two-dimensional (2-D) semiconductor, are promising materials for next-generation optoelectronic devices. They can emit strong light due to the large binding energies of excitons, quasiparticles composed of electron-hole pair, as well as an atomically thin nature. In existing 2-D light emitting devices, however, the simultaneous injection of electrons and holes into 2-D materials has been challenging, which results in low light emission efficiency.
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