Paragraf has announced the successful production of its first 6-inch wafer at a newly opened manufacturing site in Huntingdon. The development marks a step forward in scaling graphene technology for commercial applications.
The wafer incorporates graphene field-effect transistors (GFETs) created using Paragraf’s proprietary process, which grows graphene directly on silicon substrates. This approach is believed to be the first demonstration of GFETs on silicon at this size using a direct-growth method, representing a major advancement for scalable graphene electronics.
Paragraf has announced the successful production of its first 6-inch wafer at a newly opened manufacturing site in Huntingdon. The development marks a step forward in scaling graphene technology for commercial applications.The wafer incorporates graphene field-effect transistors (GFETs) created using Paragraf’s proprietary process, which grows graphene directly on silicon substrates. This approach is believed to be the first demonstration of GFETs on silicon at this size using a direct-growth method, representing a major advancement for scalable graphene electronics.
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