Researchers succeed in engineering a spin-orbit bandgap in graphene-tellurium heterostructures

The achievement is based on the controlled intercalation of tellurium (Te) atoms between layers of graphene deposited on an iridium base. Using spectroscopy, microscopy and electron diffraction techniques, the researchers observed that tellurium arranges itself into two different structures, depending on the amount used. Beyond this structure, the modified graphene exhibits an energy gap of up to 240 millielectron volts at room temperature, something the says was never before observed in a stable and adjustable form.

Researchers from IMDEA Nanociencia, Autonomous University of Madrid and INFN recently announced a breakthrough in the engineering of graphene – they found a way to open a bandgap in the material, that allows the flow of electricity in graphene to be controlled – an essential step for advanced technological applications.The achievement is based on the controlled intercalation of tellurium (Te) atoms between layers of graphene deposited on an iridium base. Using spectroscopy, microscopy and electron diffraction techniques, the researchers observed that tellurium arranges itself into two different structures, depending on the amount used. Beyond this structure, the modified graphene exhibits an energy gap of up to 240 millielectron volts at room temperature, something the says was never before observed in a stable and adjustable form.

Read More Graphene-Info – Graphene industry portal