Researchers at AMO, Graphenea Semiconductor and Emberion recently demonstrated a 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors. Such sensors have many potential applications, ranging from surveillance, search and rescue, and vehicle safety to improved sorting of food and food packaging to reduce their environmental impact.
Schematic of the device architecture of the tandem GFET‒QD photodetector. Image from: Scientific Reports
The team addressed several of the graphene wafer-scale integration challenges, including monolayer graphene chemical vapor deposition (CVD), transfer, and patterning, which fulfill the requirements for imaging functionalization and large area deposition of the multilayer QD absorber material in an inert atmosphere, as well as methods for encapsulating devices using thin film alumina (Al2O3) and hermetically sealed semiconductor packages. Such a demonstration elevates the initial concept to higher technology readiness levels in multiple dimensions, ranging from wafer-scale graphene device statistics to the development of custom CMOS circuits and the implementation of production-ready packaging.
Researchers at AMO, Graphenea Semiconductor and Emberion recently demonstrated a 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors. Such sensors have many potential applications, ranging from surveillance, search and rescue, and vehicle safety to improved sorting of food and food packaging to reduce their environmental impact.
Schematic of the device architecture of the tandem GFET‒QD photodetector. Image from: Scientific ReportsThe team addressed several of the graphene wafer-scale integration challenges, including monolayer graphene chemical vapor deposition (CVD), transfer, and patterning, which fulfill the requirements for imaging functionalization and large area deposition of the multilayer QD absorber material in an inert atmosphere, as well as methods for encapsulating devices using thin film alumina (Al2O3) and hermetically sealed semiconductor packages. Such a demonstration elevates the initial concept to higher technology readiness levels in multiple dimensions, ranging from wafer-scale graphene device statistics to the development of custom CMOS circuits and the implementation of production-ready packaging.
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